BU2508DF DATASHEET PDF

BUDF. DESCRIPTION. ·Collector-Emitter Sustaining Voltage VCEO(SUS) = V (Min). ·High Switching Speed. ·Built-in Damper Diode. APPLICATIONS. BUDF. DESCRIPTION. ·With TO-3PFa package. ·High voltage,high speed. · Built-in damper diode. APPLICATIONS. ·For use in horizontal deflection circuits. BUDF datasheet, BUDF circuit, BUDF data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.

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Buaf datasheet, equivalent, cross reference search. SOT; The seating plane is electrically isolated from all terminals. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice.

This data sheet contains final product specifications. Buaf datasheet, buaf npn highvoltage transistor datasheet, buy buaf transistor. July 6 Rev 1. Silicon diffused power transistor buaf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor in a plastic fullpack.

No liability will be accepted by the publisher for any consequence of its use. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.

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Buaf transistor equivalent substitute crossreference search. This data sheet contains target or goal specifications for product development. Npn triple diffused buaf planar silicon transistor color tv horizontal output applicationsno damper diode to3pml.

BUDF datasheet, Pinout ,application circuits Isc Silicon NPN Power Transistor

Forward bias safe operating area. Buaf datasheet, buaf bu25008df, buaf data sheet, buaf manual, buaf pdf, buaf, datenblatt, electronics buaf, alldatasheet, free, datasheet. Stress above one or more of the limiting values may cause permanent damage to the device.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. July 7 Rev 1. Typical collector storage and fall time. Typical DC current gain.

Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. Budf philips semiconductors, budf datasheet. C 1 Turn-off current.

Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 2 Rev 1. Philips silicon diffused power transistor,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Application information Where application information is given, it is advisory and does not form part of the specification.

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Reproduction in whole bu2508dd in part is prohibited without the prior written consent of the copyright owner. Refer to mounting instructions for F-pack envelopes.

BU2508DF Datasheet, Equivalent, Cross Reference Search

Silicon diffused power transistor online from elcodis, view and download budf pdf datasheet, diodes, rectifiers specifications. High collectorbase voltagevcbov high speed switching. July 5 Rev 1. Silicon diffused power transistor buaf datasheet b2508df.

Budf transistor equivalent substitute crossreference search. July 1 Rev 1. Philips semiconductors product specification silicon diffused power transistor budf general description enhanced performance, new generation, highvoltage, highspeed switching bu2508cf transistor with an integrated damper diode in a plastic fullpack envelope.

C I Region of permissible DC operation.